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Properties of Functionalized Redox-Active Monolayers on Thin Silicon Dioxide—A Study of the Dependence of Retention Time on Oxide Thickness

Properties of Functionalized Redox-Active Monolayers on Thin Silicon Dioxide—A Study of the Dependence of Retention Time on Oxide Thickness

Mathur, G.; Gowda, S.; Li, Q.; Surthi, S.; Zhao, Q.; Misra, V.
  • 期刊名称IEEE Transactions On Nanotechnology
  • 作者Mathur, G.; Gowda, S.; Li, Q.; Surthi, S.; Zhao, Q.; Misra, V.
  • 卷第4卷
  • 期第2期
  • 印刷ISSN1536-125X
  • 文件大小556.97KB
  • 发表时间2005-03
  • DOI10.1109/tnano.2004.842056
  • 页码278-283
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