The effect of IrO/sub 2/--IrO/sub 2/--Hf--LaAlO/sub 3/ gate dielectric on the bias-temperature instability of 3-D GOI CMOSFETs
- 期刊名称IEEE Electron Device Letters
- 作者Yu, D.S.; Liao, C.C.; Cheng, C.F.; Chin, A.; Li, M.F.; McAlister, S.P.
- 卷第26卷
- 期第6期
- 印刷ISSN0741-3106
- 文件大小173.87KB
- 发表时间2005-06
- DOI10.1109/led.2005.848130
- 页码407-409
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