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Etching of high aspect ratio features in Si using SF[sub 6]∕O[sub 2]∕HBr and SF[sub 6]∕O[sub 2]∕Cl[sub 2] plasma

Etching of high aspect ratio features in Si using SF[sub 6]∕O[sub 2]∕HBr and SF[sub 6]∕O[sub 2]∕Cl[sub 2] plasma

S. Gomez; R. J. Belen; M. Kiehlbauch; E. S. Aydil

作者S. Gomez; R. J. Belen; M. Kiehlbauch; E. S. Aydil
文件大小579.76KB
发表时间2005
DOI10.1116/1.2049303

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