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Improvement of the current-voltage characteristics of a tunneling dielectric by adopting a Si[sub 3]N[sub 4]∕SiO[sub 2]∕Si[sub 3]N[sub 4] multilayer for flash memory application

Improvement of the current-voltage characteristics of a tunneling dielectric by adopting a Si[sub 3]N[sub 4]∕SiO[sub 2]∕Si[sub 3]N[sub 4] multilayer for flash memory application

Hong, Sug Hun; Jang, Jae Hyuck; Park, Tae Joo; Jeong, Doo Seok; Kim, Miyoung; Hwang, Cheol Seong; Won, Jeong Yeon
  • 期刊名称Applied Physics Letters
  • 作者Hong, Sug Hun; Jang, Jae Hyuck; Park, Tae Joo; Jeong, Doo Seok; Kim, Miyoung; Hwang, Cheol Seong; Won, Jeong Yeon
  • 卷第87卷
  • 期第15期
  • 印刷ISSN0003-6951
  • 文件大小271.85KB
  • 发表时间2005
  • DOI10.1063/1.2093932
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