[IEEE International Conference on Indium Phosphide and Related Materials, 2005. - Glasgow, Scotland (May 8-12, 2005)] International Conference on Indium Phosphide and Related Materials, 2005. - Highest density 1.3 μm InAs quantum dots covered with gradient composition InGaAs SRL grown with an As/sub 2/ source using molecular beam epitaxy
- 作者Amano, T.; Sugaya, T.; Komori, K.
- 文件大小555.67KB
- 发表时间2005
- DOI10.1109/iciprm.2005.1517416
- 页码48-51