Impact Ionization MOS (I-MOS)—Part I: Device and Circuit Simulations
- 期刊名称IEEE Transactions on Electron Devices
- 作者Gopalakrishnan, K.; Griffin, P.B.; Plummer, J.D.
- 卷第52卷
- 期第1期
- 印刷ISSN0018-9383
- 文件大小503.15KB
- 发表时间2005-01
- DOI10.1109/ted.2004.841344
- 页码69-76
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