Photoluminescence investigation of Be-doped Npn AlGaAs/GaAs heterojunction bipolar transistor structures
- 作者X.Z. Shang; P.J. Niu; W.L. Guo; W.X. Wang; Q. Huang; J.M. Zhou
- 卷第30卷
- 印刷ISSN1386-9477
- 文件大小415.73KB
- 发表时间2005
- DOI10.1016/j.physe.2005.07.014
- 页码36-40
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