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Statistical analysis of tunnel currents in scaled MOS structures with a non-uniform oxide thickness distribution

Statistical analysis of tunnel currents in scaled MOS structures with a non-uniform oxide thickness distribution

S.E. Tyaginov; M.I. Vexler; A.F. Shulekin; I.V. Grekhov
  • 作者S.E. Tyaginov; M.I. Vexler; A.F. Shulekin; I.V. Grekhov
  • 卷第49卷
  • 期第7期
  • 印刷ISSN0038-1101
  • 文件大小360.94KB
  • 发表时间2005
  • DOI10.1016/j.sse.2005.04.007
  • 页码1192-1197
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