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SPIE Proceedings [SPIE Integrated Optoelectronic Devices 2005 - San Jose, CA (Saturday 22 January 2005)] Physics and Simulation of Optoelectronic Devices XIII - <title>Growth and characterization of beta-Ga<formula><inf><roman>2</roman></inf></formula>O<formula><inf><roman>3</roman></inf></formula> single crystals as transparent conductive substrates for GaN (Invited Paper)</title>

SPIE Proceedings [SPIE Integrated Optoelectronic Devices 2005 - San Jose, CA (Saturday 22 January 2005)] Physics and Simulation of Optoelectronic Devices XIII - Growth and characterization of beta-Ga<formula><inf><roman>2</roman></inf></formula>O<formula><inf><roman>3</roman></inf></formula> single crystals as transparent conductive substrates for GaN (Invited Paper)

Shimamura, Kiyoshi; Villora, Encarnacion G.; Aoki, Kazuo; Ichinose, Noboru; Osinski, Marek; Henneberger, Fritz; Amano, Hiroshi
  • 作者Shimamura, Kiyoshi; Villora, Encarnacion G.; Aoki, Kazuo; Ichinose, Noboru; Osinski, Marek; Henneberger, Fritz; Amano, Hiroshi
  • 卷第5722卷
  • 印刷ISSN0277-786X
  • 文件大小1160.75KB
  • 发表时间2005
  • DOI10.1117/12.601956
  • 页码380-391
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