MOS-diode characteristics of ultrathin Al[sub 2]O[sub 3] gate dielectrics after exposure to an electron-cyclotron-resonance plasma stream
Y. Jin; K. Saito; M. Shimada; T. Ono
- 作者Y. Jin; K. Saito; M. Shimada; T. Ono
- 文件大小556.29KB
- 发表时间2005
- DOI10.1116/1.1941250