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Effect of cerium concentration on the structural and ferroelectric properties of Bi[sub 4−x]Ce[sub x]Ti[sub 3]O[sub 12] thin films for ferroelectric random access memories

Effect of cerium concentration on the structural and ferroelectric properties of Bi[sub 4−x]Ce[sub x]Ti[sub 3]O[sub 12] thin films for ferroelectric random access memories

Y. Oh; S. Yoon
  • 作者Y. Oh; S. Yoon
  • 文件大小431.81KB
  • 发表时间2005
  • DOI10.1116/1.1926288
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