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Current–Voltage Characteristics of γ-Al
<sub/>2</sub>
O
<sub/>3</sub>
/epi-Si Resonant Tunneling Diodes with Different Quantum Well Thicknesses

Current–Voltage Characteristics of γ-Al ₂ O ₃ /epi-Si Resonant Tunneling Diodes with Different Quantum Well Thicknesses

Mosammat, Halima Khatun; Shahjahan, Mohammad; Ito, Ryoki; Sawada, Kazuaki; Ishida, Makoto

期刊名称Japanese Journal of Applied Physics
作者Mosammat, Halima Khatun; Shahjahan, Mohammad; Ito, Ryoki; Sawada, Kazuaki; Ishida, Makoto
卷第44卷
印刷ISSN0021-4922
电子ISSN1347-4065
文件大小220.10KB
发表时间2005-7-8
DOI10.1143/JJAP.44.4795
页码4795-4798

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