海量图书期刊资源，随时随地畅享阅读乐趣
Analysis of interface trap parameters from double-peak conductance spectra taken on N-implanted 3C-SiC MOS capacitorsM. Krieger; S. Beljakowa; L. Trapaidze; T. Frank; H. B. Weber; G. Pensl; N. Hatta; M. Abe; H. Nagasawa; A. Schöner · 2008