Characterization of HfSiON gate dielectrics using monoenergetic positron beams
- 作者A. Uedono; K. Ikeuchi; T. Otsuka; K. Shiraishi; K. Yamabe; S. Miyazaki; N. Umezawa; A. Hamid; T. Chikyow; T. O. M. Muramatsu; R. Suzuki; S. Inumiya; S. Kamiyama; Y. Akasaka; Y. Nara; K. Yamada
- 文件大小454.67KB
- 发表时间2006
- DOI10.1063/1.2178657
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