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[IEEE 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings - Shanghai, China (2006.10.23-2006.10.26)] 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings - Controllability of flatband voltage in high-k gate stack structures - remarkable advantages of La/sub 2/O/sub 3/ over HfO/sub 2/

[IEEE 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings - Shanghai, China (2006.10.23-2006.10.26)] 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings - Controllability of flatband voltage in high-k gate stack structures - remarkable advantages of La/sub 2/O/sub 3/ over HfO/sub 2/

Ohmori, K.; Ahmet, P.; Shiraishi, K.; Yamabe, K.; Watanabe, H.; Akasaka, Y.; Umezawa, N.; Nakajima, K.; Yoshitake, M.; Nakayama, T.; Chang, K.-s.; Kakushima, K.; Nara, Y.; Green, M.L.; Iwai, H.; Yamada, K.; Chikyow, T.
  • 作者Ohmori, K.; Ahmet, P.; Shiraishi, K.; Yamabe, K.; Watanabe, H.; Akasaka, Y.; Umezawa, N.; Nakajima, K.; Yoshitake, M.; Nakayama, T.; Chang, K.-s.; Kakushima, K.; Nara, Y.; Green, M.L.; Iwai, H.; Yamada, K.; Chikyow, T.
  • 文件大小252.25KB
  • 发表时间2006
  • DOI10.1109/icsict.2006.306256
  • 页码376-379
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