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Growth temperature dependence of structural properties for single crystalline GaN films on MgAl
              <sub/>2</sub>
              O
              <sub/>4</sub>
              substrates by pulsed laser deposition

Growth temperature dependence of structural properties for single crystalline GaN films on MgAl 2 O 4 substrates by pulsed laser deposition

Li, Guoqiang; Ohta, Jitsuo; Kobayashi, Atsushi; Fujioka, Hiroshi
  • 期刊名称Semiconductor Science and Technology
  • 作者Li, Guoqiang; Ohta, Jitsuo; Kobayashi, Atsushi; Fujioka, Hiroshi
  • 卷第21卷
  • 期第8期
  • 印刷ISSN0268-1242
  • 电子ISSN1361-6641
  • 文件大小971.94KB
  • 发表时间2006-08-01
  • DOI10.1088/0268-1242/21/8/007
  • 页码1026-1029
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