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Determination of the Temperature and Field Dependence of the Interface Conductivity Mobility in 4H-SiC/SiO<sub>2</sub>

Determination of the Temperature and Field Dependence of the Interface Conductivity Mobility in 4H-SiC/SiO2

Pennington, Gary; Potbhare, Siddharth; Goldsman, Neil; Habersat, Daniel B.; Lelis, Aivars J.
  • 期刊名称Materials Science Forum
  • 作者Pennington, Gary; Potbhare, Siddharth; Goldsman, Neil; Habersat, Daniel B.; Lelis, Aivars J.
  • 电子ISSN1662-9752
  • 文件大小352.98KB
  • 发表时间2006
  • DOI10.4028/www.scientific.net/MSF.527-529.1055
  • 页码1055-1058
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