Characterization of 4H-SiC MOSFETs with NO-Annealed CVD Oxide
- 期刊名称Materials Science Forum
- 作者Yano, Hiroshi; Hatayama, Tomoaki; Uraoka, Yukiharu; Fuyuki, Takashi
- 电子ISSN1662-9752
- 文件大小319.17KB
- 发表时间2006
- DOI10.4028/www.scientific.net/MSF.527-529.971
- 页码971-974
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