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Investigation of Molybdenum Nitride Gate on SiO[sub 2] and HfO[sub 2] for MOSFET Application

Investigation of Molybdenum Nitride Gate on SiO[sub 2] and HfO[sub 2] for MOSFET Application

Tsui, Bing-Yue; Huang, Chih-Feng; Lu, Chih-Hsun
  • 期刊名称Journal of The Electrochemical Society
  • 作者Tsui, Bing-Yue; Huang, Chih-Feng; Lu, Chih-Hsun
  • 卷第153卷
  • 期第3期
  • 印刷ISSN0013-4651
  • 文件大小259.40KB
  • 发表时间2006
  • DOI10.1149/1.2158576
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