Erratum for ‘Non-volatile Al2O3 memory using an Al-rich structure as a charge-storing layer’
- 期刊名称Electronics Letters
- 作者Nakata, S.; Saito, K.; Shimada, M.
- 卷第42卷
- 期第8期
- 印刷ISSN0013-5194
- 文件大小21.94KB
- 发表时间2006
- DOI10.1049/el:20060797
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