发现好书期刊，享受阅读乐趣

海量图书期刊资源，随时随地畅享阅读乐趣

Temperature dependences of an In0.46Ga0.54As/In0.42Al0.58As based metamorphic high electron mobility transistor (MHEMT)

Temperature dependences of an In0.46Ga0.54As/In0.42Al0.58As based metamorphic high electron mobility transistor (MHEMT)

C. Chen; P. Lai; W. Lour; D. Guo; J. Tsai; W. Liu

作者C. Chen; P. Lai; W. Lour; D. Guo; J. Tsai; W. Liu
文件大小397.75KB
发表时间2006
DOI10.1088/0268-1242/21/9/024

← 返回【学霸图书馆】主页