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Optimum Ferroelectric Film Thickness in Metal–Ferroelectric–Insulator–Semiconductor Structures Composed of Pt, (Bi,La)4Ti3O12, HfO2, and Si

Optimum Ferroelectric Film Thickness in Metal–Ferroelectric–Insulator–Semiconductor Structures Composed of Pt, (Bi,La)4Ti3O12, HfO2, and Si

K. Takahashi; K. Aizawa; H. Ishiwara
  • 作者K. Takahashi; K. Aizawa; H. Ishiwara
  • 文件大小287.30KB
  • 发表时间2006
  • DOI10.1143/JJAP.45.5098
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