650 nm GalnP/AlGaInP laser diodes with low threshold and compressively strained MQW active layer

• 作者Wei Xia; Shu-qiang Li; Ling Wang; De-ying Ma; Xin Zhang; Fu-xun Wang; Gang Ji; Ding-wen Liu; Zhong-xiang Ren; Xian-gang Xu; Liang-mo Mei
• 卷第2卷
• 期第4期
• 印刷ISSN1673-1905
• 电子ISSN1993-5013
• 文件大小310.92KB
• 发表时间2006-07
• DOI10.1007/bf03033655
• 页码263-265