A new structure and its analytical breakdown model of high voltage SOI device with Step Unmovable Surface Charges of buried oxide layer
- 作者Yufeng Guo; Zhaoji Li; Bo Zhang; Xiaorong Luo
- 卷第23卷
- 期第3期
- 印刷ISSN0217-9822
- 电子ISSN1993-0615
- 文件大小333.65KB
- 发表时间2006-05
- DOI10.1007/s11767-004-0164-5
- 页码437-443
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