Fabrication ofp-njunctions in ZnO by arsenic ion implantation followed by annealing in atomic oxygen

• 作者I. V. Rogozin; A. N. Georgobiani; M. B. Kotlyarevsky
• 卷第43卷
• 期第7期
• 印刷ISSN0020-1685
• 电子ISSN1608-3172
• 文件大小199.62KB
• 发表时间2007-07
• DOI10.1134/s0020168507070084
• 页码714-719