A simple drain current model for Schottky-barrier carbon nanotube field effect transistors
- 期刊名称Nanotechnology
- 作者Jiménez, D; Cartoixà, X; Miranda, E; Suñé, J; Chaves, F A; Roche, S
- 卷第18卷
- 期第2期
- 印刷ISSN0957-4484
- 电子ISSN1361-6528
- 文件大小561.17KB
- 发表时间2007-01-17
- DOI10.1088/0957-4484/18/2/025201
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