[IEEE 2007 IEEE 19th International Conference on Indium Phosphide & Related Materials - Matsue, Japan (2007.05.14-2007.05.18)] 2007 IEEE 19th International Conference on Indium Phosphide & Related Materials - Fabrication of hot electron transistors controlled by insulated gate
Hino, Takahiro; Suwa, Akira; Hasegawa, Takashi; Saito, Hisashi; Oono, Masaya; Miyamoto, Yasuyuki; Furuya, Kazuhito
- 作者Hino, Takahiro; Suwa, Akira; Hasegawa, Takashi; Saito, Hisashi; Oono, Masaya; Miyamoto, Yasuyuki; Furuya, Kazuhito
- 文件大小4116.50KB
- 发表时间2007
- DOI10.1109/iciprm.2007.381140
- 页码129-132