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Confinement effect in P doped spherical Si nanocrystalsA. Debernardi; M. Fanciulli · 2009
Epitaxial anatase HfO2 on high-mobility substrate for ultra-scaled CMOS devicesA. Debernardi; C. Wiemer; M. Fanciulli · 2008
Structural and vibrational properties of high-dielectric oxides, HfO2 and TiO2: A comparative studyA. Debernardi; M. Fanciulli · 2006
Infrared spectroscopy and X-ray diffraction studies on the crystallographic evolution of La2O3 films upon annealingD. Tsoutsou; G. Scarel; A. Debernardi; S.C. Capelli; S.N. Volkos; L. Lamagna; S. Schamm; P.E. Coulon; M. Fanciulli · 2008
Erratum to “Infrared spectroscopy and X-ray diffraction studies on the crystallographic evolution of La2O3 films upon annealing” Microelectronic Engineering 85 (2008) 2411–2413D. Tsoutsou; G. Scarel; A. Debernardi; S.C. Capelli; S.N. Volkos; L. Lamagna; S. Schamm; P.E. Coulon; M. Fanciulli · 2009