发现好书期刊，享受阅读乐趣

海量图书期刊资源，随时随地畅享阅读乐趣

First principles study of the HfO[sub 2]∕SiO[sub 2] interface: Application to high-k gate structures

First principles study of the HfO[sub 2]∕SiO[sub 2] interface: Application to high-k gate structures

Ha, Jeong-Hee; McIntyre, Paul C.; (KJ) Cho, Kyeongjae

期刊名称Journal of Applied Physics
作者Ha, Jeong-Hee; McIntyre, Paul C.; (KJ) Cho, Kyeongjae
卷第101卷
期第3期
印刷ISSN0021-8979
文件大小698.95KB
发表时间2007
DOI10.1063/1.2433696

← 返回【学霸图书馆】主页