Impacts of a polycrystalline-silicon buffer layer on the performance and reliability of strained n-channel metal-oxide-semiconductor field-effect transistors with SiN capping
- 期刊名称Applied Physics Letters
- 作者Lu, Ching-Sen; Lin, Horng-Chih; Huang, Jian-Ming; Lee, Yao-Jen
- 卷第90卷
- 期第12期
- 印刷ISSN0003-6951
- 文件大小441.39KB
- 发表时间2007
- DOI10.1063/1.2715122
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