Growth evolution and pendeo-epitaxy of non-polar AlN and GaN thin films on 4H–SiC (1 1 2¯ 0)

• 作者S.M. Bishop; J.-S. Park; J. Gu; B.P. Wagner; Z.J. Reitmeier; D.A. Batchelor; D.N. Zakharov; Z. Liliental-Weber; R.F. Davis
• 卷第300卷
• 期第1期
• 印刷ISSN0022-0248
• 文件大小1026.34KB
• 发表时间2007
• DOI10.1016/j.jcrysgro.2006.10.207
• 页码83-89