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Characterization of MOS Capacitors Fabricated on n-type 4H-SiC Implanted with Nitrogen at High Dose

Characterization of MOS Capacitors Fabricated on n-type 4H-SiC Implanted with Nitrogen at High Dose

Poggi, Antonella; Moscatelli, Francesco; Hijikata, Yasuto; Solmi, Sandro; Sanmartin, Michele; Tamarri, Fabrizio; Nipoti, Roberta
  • 期刊名称Materials Science Forum
  • 作者Poggi, Antonella; Moscatelli, Francesco; Hijikata, Yasuto; Solmi, Sandro; Sanmartin, Michele; Tamarri, Fabrizio; Nipoti, Roberta
  • 电子ISSN1662-9752
  • 文件大小367.72KB
  • 发表时间2007
  • DOI10.4028/www.scientific.net/MSF.556-557.639
  • 页码639-642
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