Fabrication of MOS Capacitors by Wet Oxidation of p-Type 4H-SiC Preamorphized by Nitrogen Ion Implantation
- 期刊名称Materials Science Forum
- 作者Hijikata, Yasuto; Yoshida, Sadafumi; Moscatelli, Francesco; Poggi, Antonella; Solmi, Sandro; Cristiani, Stefano; Nipoti, Roberta
- 电子ISSN1662-9752
- 文件大小224.84KB
- 发表时间2007
- DOI10.4028/www.scientific.net/MSF.556-557.651
- 页码651-654
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