Stress development and impurity segregation during oxidation of the Si(1 0 0) surface

• 作者Daniel J. Cole; Mike C. Payne; Lucio Colombi Ciacchi
• 卷第601卷
• 期第21期
• 印刷ISSN0039-6028
• 文件大小1573.06KB
• 发表时间2007
• DOI10.1016/j.susc.2007.08.013
• 页码4888-4898