发现好书期刊，享受阅读乐趣

海量图书期刊资源，随时随地畅享阅读乐趣

[IEEE 2008 International Conference on Actual Problems of Electron Devices Engineering (APEDE) - Saratov, Russia (2008.09.24-2008.09.25)] 2008 International Conference on Actual Problems of Electron Devices Engineering - Modelling of electrostatic properties of <110> uniaxially strained silicon n-channel mosfets

[IEEE 2008 International Conference on Actual Problems of Electron Devices Engineering (APEDE) - Saratov, Russia (2008.09.24-2008.09.25)] 2008 International Conference on Actual Problems of Electron Devices Engineering - Modelling of electrostatic properties of <110> uniaxially strained silicon n-channel mosfets

Rahman, Md. Manzur

作者Rahman, Md. Manzur
文件大小1228.75KB
发表时间2008
DOI10.1109/APEDE.2008.4720131
页码155-160

← 返回【学霸图书馆】主页