[IEEE 2008 International Conference on Electrical and Computer Engineering - Dhaka, Bangladesh (2008.12.20-2008.12.22)] 2008 International Conference on Electrical and Computer Engineering - Inversion layer properties of 〈110〉 uniaxially strained silicon n-channel MOSFETs
- 作者Rahman, Samia Nawar; Faraby, Hasan Mohammad; Rahman, Md Manzur; Huda, Md. Quamrul; Haque, Anisul
- 文件大小1075.86KB
- 发表时间2008
- DOI10.1109/ICECE.2008.4769247
- 页码438-441
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