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[IEEE 2008 IEEE International SOI Conference - New Paltz, NY (2008.10.6-2008.10.9)] 2008 IEEE International SOI Conference - Hole velocity enhancement in sub-100 nm gate length strained-SiGe channel p-MOSFETs on insulator

[IEEE 2008 IEEE International SOI Conference - New Paltz, NY (2008.10.6-2008.10.9)] 2008 IEEE International SOI Conference - Hole velocity enhancement in sub-100 nm gate length strained-SiGe channel p-MOSFETs on insulator

Gomez, L.; Hashemi, P.; Hoyt, J.L.

作者Gomez, L.; Hashemi, P.; Hoyt, J.L.
文件大小468.74KB
发表时间2008
DOI10.1109/soi.2008.4656345
页码163-164

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