Design Considerations for PD/SOI SRAM: Impact of Gate Leakage and Threshold Voltage Variation
- 期刊名称IEEE Transactions on Semiconductor Manufacturing
- 作者Kanj, Rouwaida; Joshi, Rajiv V.; Sivagnaname, Jayakumaran; Kuang, Jente B.; Acharyya, Dhruva; Nguyen, Tuyet Y.; Nassif, Sani
- 卷第21卷
- 期第1期
- 印刷ISSN0894-6507
- 文件大小1520.34KB
- 发表时间2008
- DOI10.1109/tsm.2007.913189
- 页码33-40
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