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Hot-Carrier-Induced Damage and Its Spatial Location on RF Noise in Deep-Submicrometer NMOSFETs

Hot-Carrier-Induced Damage and Its Spatial Location on RF Noise in Deep-Submicrometer NMOSFETs

Hao Su, ; Hong Wang, ; Tao Xu, ; Rong Zeng,

期刊名称IEEE Transactions on Microwave Theory and Techniques
作者Hao Su, ; Hong Wang, ; Tao Xu, ; Rong Zeng,
卷第56卷
期第5期
印刷ISSN0018-9480
电子ISSN1557-9670
文件大小447.83KB
发表时间2008-05
DOI10.1109/tmtt.2008.921304
页码1295-1300

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