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[IEEE 2008 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2008) - Hakone-Machi, Kanagawa (2008.09.9-2008.09.11)] 2008 International Conference on Simulation of Semiconductor Processes and Devices - Effect of interface characteristics of W/HfO<inf>2±x</inf> on electronic reliability: Quantum chemical molecular dynamics study

[IEEE 2008 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2008) - Hakone-Machi, Kanagawa (2008.09.9-2008.09.11)] 2008 International Conference on Simulation of Semiconductor Processes and Devices - Effect of interface characteristics of W/HfO2±x on electronic reliability: Quantum chemical molecular dynamics study

Ken Suzuki, ; Tatsuya Inoue, ; Hideo Miura,
  • 作者Ken Suzuki, ; Tatsuya Inoue, ; Hideo Miura,
  • 文件大小985.39KB
  • 发表时间2008
  • DOI10.1109/sispad.2008.4648311
  • 页码357-360
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