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- 期刊名称Physical Review A
- 作者Mitroy, J.; Zhang, J. Y.; Bromley, M. W. J.
- 卷第77卷
- 期第3期
- 印刷ISSN1050-2947
- 电子ISSN1094-1622
- 文件大小115.12KB
- 发表时间2008-3-27
- DOI10.1103/PhysRevA.77.032512
Trends in industrial silicon solar cell processesM. Ghannam; S. Sivoththaman; J. Poortmans; J. Szlufcik; J. Nijs; R. Mertens; R. Van Overstraeten · 1997
Temperature and doping dependence of the fundamental surface recombination velocityM. Ghannam; R. Mertens; R. De Keersmaecker · 1985
Silicon heterojunction bipolar transistors with amorphous and microcrystalline emittersJ. Symons; M. Ghannam; A. Neugroschel; J. Nijs; R. Mertens · 1987
15.9% efficiency solar cells on electromagnetic cold crucible cast multicrystalline siliconElgamel, H. E.; Ghannam, M. Y.; Murti, M. R.; Nijs, J.; Mertens, R. · Applied Physics Letters · 1993
BAND-TAIL SHOCKLEY-READ-HALL RECOMBINATION IN HEAVILY DOPED SILICONGHANNAM, M. Y.; MERTENS, R. P.; JAIN, S. C.; NIJS, J. F.; VAN OVERSTRAETEN, R. · Le Journal de Physique Colloques · 1988
The use of amorphous and microcrystalline silicon for silicon heterojunction bipolar transistorsJ. Symons; M. Ghannam; J. Nijs; A. Ammel; P. Schepper; A. Neugroschel; R. Mertens · 1986
Recent results obtained at IMEC on multicrystalline silicon solar cellsJ. Nijs; H.E. Elgamel; J. Szlufcik; S. Sivoththaman; O. Evrard; K. De Clercq; P. De Schepper; J. Poortmans; M. Ghannam; R. Mertens; P. Fath; G. Willeke · 1995