[IEEE 2008 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits - singapore (2008.07.7-2008.07.11)] 2008 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits - Stress-induced degradation in strain-engineered nMOSFETs
- 作者Maiti, T. K.; Mahato, S. S.; Bera, M. K.; Sengupta, M.; Chakraborty, P.; Mahata, C.; Chakraborty, A.; Maiti, C. K.
- 文件大小231.60KB
- 发表时间2008
- DOI10.1109/ipfa.2008.4588185
- 页码1-3
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