Effect of the oxidation process on SiO2/4H-SiC interface electrical characteristics
- 作者R. Palmieri; H. Boudinov; C. Radtke; E.F. da Silva Jr.
- 卷第255卷
- 期第3期
- 印刷ISSN0169-4332
- 文件大小342.07KB
- 发表时间2008
- DOI10.1016/j.apsusc.2008.07.014
- 页码706-708
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