The characteristics and interfacial electronic structures of organic thin film transistor devices with ultrathin (HfO[sub 2])[sub x](SiO[sub 2])[sub 1−x] gate dielectrics

Cho, S. W.; Jeong, J. G.; Park, S. H.; Cho, M.-H.; Jeong, K.; Whang, C.-N.; Yi, Y.

期刊名称Applied Physics Letters
作者Cho, S. W.; Jeong, J. G.; Park, S. H.; Cho, M.-H.; Jeong, K.; Whang, C.-N.; Yi, Y.
卷第92卷
期第21期
印刷ISSN0003-6951
文件大小593.04KB
发表时间2008
DOI10.1063/1.2931697

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