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[IEEE 2008 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2008.12.15-2008.12.17)] 2008 IEEE International Electron Devices Meeting - A 300-mm wafer-level three-dimensional integration scheme using tungsten through-silicon via and hybrid Cu-adhesive bonding

[IEEE 2008 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2008.12.15-2008.12.17)] 2008 IEEE International Electron Devices Meeting - A 300-mm wafer-level three-dimensional integration scheme using tungsten through-silicon via and hybrid Cu-adhesive bonding

Liu, F.; Yu, R. R.; Young, A. M.; Doyle, J. P.; Wang, X.; Shi, L.; Chen, K.-N.; Li, X.; Dipaola, D. A.; Brown, D.; Ryan, C. T.; Hagan, J. A.; Wong, K. H.; Lu, M.; Gu, X.; Klymko, N. R.; Perfecto, E. D.; Merryman, A. G.; Kelly, K. A.; Purushothaman, S.; Koester, S. J.; Wisnieff, R.; Haensch, W.
  • 作者Liu, F.; Yu, R. R.; Young, A. M.; Doyle, J. P.; Wang, X.; Shi, L.; Chen, K.-N.; Li, X.; Dipaola, D. A.; Brown, D.; Ryan, C. T.; Hagan, J. A.; Wong, K. H.; Lu, M.; Gu, X.; Klymko, N. R.; Perfecto, E. D.; Merryman, A. G.; Kelly, K. A.; Purushothaman, S.; Koester, S. J.; Wisnieff, R.; Haensch, W.
  • 文件大小1362.29KB
  • 发表时间2008
  • DOI10.1109/iedm.2008.4796762
  • 页码1-4
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