Growth and interface of HfO[sub 2] films on H-terminated Si from a TDMAH and H[sub 2]O atomic layer deposition process
- 期刊名称Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
- 作者Hackley, Justin C.; Demaree, J. Derek; Gougousi, Theodosia
- 卷第26卷
- 期第5期
- 印刷ISSN0734-2101
- 文件大小702.31KB
- 发表时间2008
- DOI10.1116/1.2965813
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[IEEE 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Shanghai, China (2010.11.1-2010.11.4)] 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - Design of novel QCTGAL circuitWang, Peng-Jun; Gao, Hong · 2010
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