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[IEEE 2008 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits - singapore (2008.07.7-2008.07.11)] 2008 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits - DIBL in short-channel strained-Si n-MOSFET

[IEEE 2008 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits - singapore (2008.07.7-2008.07.11)] 2008 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits - DIBL in short-channel strained-Si n-MOSFET

Mahato, S. S.; Chakraborty, P.; Maiti, T. K.; Bera, M. K.; Mahata, C.; Sengupta, M.; Chakraborty, A.; Sarkar, S. K.; Maiti, C. K.
  • 作者Mahato, S. S.; Chakraborty, P.; Maiti, T. K.; Bera, M. K.; Mahata, C.; Sengupta, M.; Chakraborty, A.; Sarkar, S. K.; Maiti, C. K.
  • 文件大小231.56KB
  • 发表时间2008
  • DOI10.1109/ipfa.2008.4588186
  • 页码1-4
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