Electrical characteristics of MOSFETs with La2O3/Y2O3 gate stack
Parhat Ahmet; Kentaro Nakagawa; Kuniyuki Kakushima; Hiroshi Nohira; Kazuo Tsutsui; Nobuyuki Sugii; Takeo Hattori; Hiroshi Iwai
- 作者Parhat Ahmet; Kentaro Nakagawa; Kuniyuki Kakushima; Hiroshi Nohira; Kazuo Tsutsui; Nobuyuki Sugii; Takeo Hattori; Hiroshi Iwai
- 卷第48卷
- 印刷ISSN0026-2714
- 文件大小323.73KB
- 发表时间2008
- DOI10.1016/j.microrel.2008.09.004
- 页码1769-1771