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Electrical characteristics of MOSFETs with La2O3/Y2O3 gate stack

Electrical characteristics of MOSFETs with La2O3/Y2O3 gate stack

Parhat Ahmet; Kentaro Nakagawa; Kuniyuki Kakushima; Hiroshi Nohira; Kazuo Tsutsui; Nobuyuki Sugii; Takeo Hattori; Hiroshi Iwai
  • 作者Parhat Ahmet; Kentaro Nakagawa; Kuniyuki Kakushima; Hiroshi Nohira; Kazuo Tsutsui; Nobuyuki Sugii; Takeo Hattori; Hiroshi Iwai
  • 卷第48卷
  • 印刷ISSN0026-2714
  • 文件大小323.73KB
  • 发表时间2008
  • DOI10.1016/j.microrel.2008.09.004
  • 页码1769-1771
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