Self-aligned top-gate amorphous gallium indium zinc oxide thin film transistors
- 作者J. Park; I. Song; S. Kim; S. Kim; C. Kim; J. Lee; H. Lee; E. Lee; H. Yin; K. Kim; K. Kwon; Y. Park
- 文件大小579.21KB
- 发表时间2008
- DOI10.1063/1.2966145
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