Enhanced Hole Transport in Short-Channel Strained-SiGe p-MOSFETs
- 作者Gomez, L.; Hashemi, P.; Hoyt, J.L.
- 卷第56卷
- 期第11期
- 印刷ISSN0018-9383
- 电子ISSN1557-9646
- 文件大小1275.50KB
- 发表时间2009
- DOI10.1109/ted.2009.2031043
- 页码2644-2651
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